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Upconversion emission of a Er3+-doped glass microsphere under 633 nm excitation 会议论文
MICROELECTRONICS JOURNAL, 35 (4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Wang JY;  Ji GR;  Jin P;  Zhao LJ;  Zhang CZ;  Wang JY Bewing Univ Technol Coll Appl Sci Beijing 100022 Peoples R China. 电子邮箱地址: wangjiyou@bjut.edu.cn
Adobe PDF(94Kb)  |  收藏  |  浏览/下载：1278/244  |  提交时间：2010/10/29
Upconversion  Doped-er3++ Glass Microsphere  Morphology-dependent Resonances  
Study of infrared luminescence from Er-implanted GaN films 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Chen WD;  Song SF;  Zhu JJ;  Wang XL;  Chen CY;  Hsu CC;  Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: wdchen@red.semi.ac.cn
Adobe PDF(219Kb)  |  收藏  |  浏览/下载：1301/325  |  提交时间：2010/11/15
Doping  Metalorganic Chemical Vapor Deposition  Molecular Beam Epitaxy  Gallium Compounds  Semiconducting Gallium Compounds  Erbium  
Luminescence properties of Er3+ - Doped SiOx films containing amorphous Si nanoparticles 会议论文
2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Hong Kong, PEOPLES R CHINA, SEP 29-OCT 01, 2004
作者:  Chen WD;  Chen CY;  Chen, WD, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(91Kb)  |  收藏  |  浏览/下载：1360/279  |  提交时间：2010/03/29
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1534/405  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain  
Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Chen CY;  Chen WD;  Song SF;  Hsu CC;  Chen CY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(726Kb)  |  收藏  |  浏览/下载：1104/182  |  提交时间：2010/11/15
Hydrogenated Amorphous-silicon  Photoluminescence  Luminescence  Intensity  System  
Mechanism on exciton-mediated energy transfer in erbium-doped silicon 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Lei HB;  Yang QQ;  Ou HY;  Wang QM;  Lei HB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(229Kb)  |  收藏  |  浏览/下载：1245/251  |  提交时间：2010/11/15
Er-doped Silicon  Photoluminescence  Energy Transfer  Al2o3 Wave-guides  Er  Electroluminescence  Epitaxy  Gaas  
Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Wang JN;  Sun BQ;  Wang XR;  Wang YQ;  Ge WK;  Jiang DS;  Wang HL;  Wang JN Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1296/271  |  提交时间：2010/11/15
Superlattices  Gaas/alas  Electric Field Domains  Tunnelling  Oscillations  
Self-sustained oscillations caused by magnetic field in a weakly-coupled GaAs/AlAs superlattice 会议论文
PHYSICA B, 279 (1-3), HONG KONG, HONG KONG, JUN 21-25, 1999
作者:  Sun BQ;  Wang JN;  Jiang DS;  Wu JQ;  Wang YQ;  Ge WK;  Sun BQ Chinese Acad Sci Inst Semicond NLSM POB 912 Beijing 100083 Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1206/228  |  提交时间：2010/11/15
Transverse Magnetic Field  Field Domains  Self-sustained Oscillations  Semiconductors  
Methods to tune the electronic states of self-organized InAs/GaAs quantum dots 会议论文
PHYSICA B-CONDENSED MATTER, 279 (1-3), HONG KONG, HONG KONG, JUN 21-25, 1999
作者:  Wang H;  Niu ZC;  Zhu HJ;  Wang ZM;  Jiang DS;  Feng SL;  Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(119Kb)  |  收藏  |  浏览/下载：1317/261  |  提交时间：2010/11/15
Quantum Dot  Growth Interruption  Quantum Dot Laser  
Preparation and characterization of erbium doped sol-gel silica glasses 会议论文
RARE-EARTH-DOPED MATERIALS AND DEVICES III, 3622, SAN JOSE, CA, JAN 27-28, 1999
作者:  Lei HB;  Yang QQ;  Ou HY;  Chen BW;  Yu JZ;  Wang QM;  Xie DT;  Wu JG;  Xu DF;  Xu GX;  Lei HB Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(461Kb)  |  收藏  |  浏览/下载：1614/368  |  提交时间：2010/10/29
Er-doped Silica Glass  Sol-gel Process  Photoluminescence  Planar Wave-guides  Molecular-beam Epitaxy  Crystal Silicon  Implanted Si  Luminescence  Electroluminescence  Fabrication  Impurities  Films  Ions