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The diphasic nc-Si/a-Si : H thin film with improved medium-range order 会议论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, 338, Campos do Jordao, BRAZIL, AUG 25-29, 2003
作者:  Zhang S;  Liao X;  Xu Y;  Martins R;  Fortunato E;  Kong G;  Zhang S Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China. 电子邮箱地址: sz@uninova.pt
Adobe PDF(484Kb)  |  收藏  |  浏览/下载：1366/340  |  提交时间：2010/11/15
Amorphous-silicon Films  Scattering  Absorption  Densities  Hydrogen  
A V-shaped module technique for promoting generation photocurrent density of silicon solar cells 会议论文
FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, MAY 31-JUN 02, 2004
作者:  Li, JM;  Chong, M;  Duan, XF;  Xu, JD;  Gao, M;  Wang, FL;  Li, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(135Kb)  |  收藏  |  浏览/下载：1569/370  |  提交时间：2010/03/29
Silicon  Solar Cells  V-shaped Structure  
A silicon capacitive microphone based on oxidized porous silicon sacrificial technology 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Ning, J;  Liu, ZL;  Liu, HZ;  Ge, YC;  Ning, J, Chinese Acad Sci, Microelect R&D Ctr, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(151Kb)  |  收藏  |  浏览/下载：1079/186  |  提交时间：2010/03/29
Silicon Capacitive Microphone  Oxidized Porous Silicon  Sacrificial Layer  
Structural optimizations of SOI-based single-mode rib waveguide bends 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Chen, YY;  Yan, QF;  Yang, D;  Chen, SW;  Yu, JZ;  Chen, YY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1170/216  |  提交时间：2010/03/29
Silicon-on-insulator  Bend Waveguide  Bend Loss  Integrated Optics  Silicon-on-insulator  
The status, limits and countermeasures in the development of the silicon microelectronics industry 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Liu, ZL;  Liu, ZL, Chinese Acad Sci, Inst Semicond, Microelect R&D Ctr, Beijing 100083, Peoples R China.
Adobe PDF(530Kb)  |  收藏  |  浏览/下载：1040/149  |  提交时间：2010/03/29
Silicon Microelectronics  Cmos  Theoretic Limit  Technologic Limit  Economic Limit  
Characterization of polymorphous silicon thin film and solar cells 会议论文
ADVANCED MATERIALS FORUM II, 455-456, Caparica, PORTUGAL, APR 14-16, 2003
作者:  Zhang S;  Xu Y;  Liao X;  Martins R;  Fortunato E;  Hu Z;  Kong G;  Zhang S Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China. 电子邮箱地址: sz@uninova.pt
Adobe PDF(270Kb)  |  收藏  |  浏览/下载：1279/215  |  提交时间：2010/10/29
Polymorphous Silicon  Thin Film  Solar Cell  
Improved diphasic nc-si/a-si : H I-layer materials using PECVD 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Hao, HY;  Zhang, SB;  Xu, YY;  Zeng, XB;  Diao, HW;  Kong, GL;  Liao, XB;  Hao, HY, Chinese Acad Sci, Inst Semicond, Ctr Condensed Matter Phys, State Lab Surface Phys, Beijing 100083, Peoples R China.
Adobe PDF(129Kb)  |  收藏  |  浏览/下载：1305/230  |  提交时间：2010/03/29
Open-circuit Voltage  Silicon Solar-cells  Amorphous-silicon  Absorption