Improved diphasic nc-si/a-si : H I-layer materials using PECVD

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Improved diphasic nc-si/a-si : H I-layer materials using PECVD
	Hao, HY; Zhang, SB; Xu, YY; Zeng, XB; Diao, HW; Kong, GL; Liao, XB; Hao, HY, Chinese Acad Sci, Inst Semicond, Ctr Condensed Matter Phys, State Lab Surface Phys, Beijing 100083, Peoples R China.
	2004
会议名称	7th International Conference on Solid-State and Integrated Circuits Technology
会议录名称	2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY
页码	VOLS 1- 3 PROCEEDINGS: 2025-2028
会议日期	OCT 18-21, 2004
会议地点	Beijing, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-8511-X
部门归属	chinese acad sci, inst semicond, ctr condensed matter phys, state lab surface phys, beijing 100083, peoples r china
摘要	Two series of films has been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystalline state. The photoelectronic properties of the films have been investigated as a function of crystalline fraction. In comparison with typical a-Si:H, these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, higher mobility life-time product ( LT) and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films as the intrinsic layer, a p-i-n junction solar cell has been prepared with an initial efficiency of 9. 10 % and a stabilized efficiency of 8.56 % (AM 1.5, 100 mW/cm(2)).
关键词	Open-circuit Voltage Silicon Solar-cells Amorphous-silicon Absorption
学科领域	半导体材料
主办者	Chinese Inst Elect.; IEEE Beijing Sect.; IEEE Elect Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid-State Circuits Soc.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; IEE Elect Div.; URSI Commiss D.; Inst Elect Engineers Korea.; Natl Nat Sci Fdn China.; Beijing Municipal Bureau Ind Dev.; Peking Univ.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10106
专题	中国科学院半导体研究所（2009年前）
通讯作者	Hao, HY, Chinese Acad Sci, Inst Semicond, Ctr Condensed Matter Phys, State Lab Surface Phys, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Hao, HY,Zhang, SB,Xu, YY,et al. Improved diphasic nc-si/a-si : H I-layer materials using PECVD[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:VOLS 1- 3 PROCEEDINGS: 2025-2028.

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