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In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE 会议论文
JOURNAL OF CRYSTAL GROWTH, 221, SAPPORO, JAPAN, JUN 05-09, 2000
作者:  Lu DC;  Wang CX;  Yuan HR;  Liu XL;  Wang XH;  Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat & Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(428Kb)  |  收藏  |  浏览/下载：1378/179  |  提交时间：2010/11/15
Gan  Annealing Treatment  In-doping  Movpe  Photoluminescence  Chemical-vapor-deposition  Phase Epitaxy  Buffer Layer  Films  Sapphire  
Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 72 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Wang QY;  Nie JP;  Yu F;  Liu ZL;  Yu YH;  Wang QY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(121Kb)  |  收藏  |  浏览/下载：1352/267  |  提交时间：2010/11/15
Solid Phase Epitaxy  SilicOn On Sapphire (Sos)  Carrier Mobility  
Influence of precipitates on GaN epilayer quality 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Kang JY;  Huang QS;  Wang ZG;  Kang JY Xiamen Univ Dept Phys Xiamen 361005 Peoples R China.
Adobe PDF(697Kb)  |  收藏  |  浏览/下载：1239/268  |  提交时间：2010/11/15
Precipitate  Gan  Wds  Tem  Cathodoluminescence  Vapor-phase Epitaxy  Films  Mechanism  Growth