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In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, TSUKUBA, JAPAN, OCT 28-NOV 02, 2001
作者:  Sun GS;  Luo MC;  Wang L;  Zhu SR;  Li JM;  Zeng YP;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(751Kb)  |  收藏  |  浏览/下载：1553/300  |  提交时间：2010/11/15
3c-sic  In-situ Doping  Low-pressure Cvd  Sapphire Substrate  Chemical-vapor-deposition  Competition Epitaxy  
Studies of 6H-SiC devices 会议论文
CURRENT APPLIED PHYSICS, 2 (5), SEOUL, SOUTH KOREA, DEC 05-09, 2001
作者:  Wang SR;  Liu ZL;  Wang SR Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
收藏  |  浏览/下载：899/0  |  提交时间：2010/11/15
Sic  Schottky  Pn Junction Diodes  Mos Capacitor  Junction Diodes  
Ti Schottky barrier diodes on n-type 6H-SiC 会议论文
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, SHANGHAI, PEOPLES R CHINA, OCT 22-25, 2001
作者:  Liu ZL;  Wang SR;  Yu F;  Zhang YG;  Zhao H;  Liu ZL Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(214Kb)  |  收藏  |  浏览/下载：1585/581  |  提交时间：2010/10/29
Semiconductor  
Hybrid CMOS/VCSEL optoelectronic modules 会议论文
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, SHANGHAI, PEOPLES R CHINA, OCT 22-25, 2001
作者:  Chen HD;  Mao LH;  Tiang J;  Liang K;  Du Y;  Huang YZ;  Wu RG;  Feng J;  Ke XM;  Liu HY;  Wang ZG;  Li SR;  Li ZY;  Guo WL;  Chen HD Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(212Kb)  |  收藏  |  浏览/下载：1657/313  |  提交时间：2010/10/29
Vcsel  Cmos  Mcm  Optoelectronic Integration  Smart Pixels  Optical Interconnects  Smart  
Epitaxial growth of SiC on complex substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun GS;  Li JM;  Luo MC;  Zhu SR;  Wang L;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(196Kb)  |  收藏  |  浏览/下载：1309/261  |  提交时间：2010/11/15
Optical Microscopy  X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Sapphire  Deposition  Films  
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li JM;  Sun GS;  Zhu SR;  Wang L;  Luo MC;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1278/247  |  提交时间：2010/11/15
X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Low-temperature Growth  Films  
Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing 会议论文
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507, SAN FRANCISCO, CA, APR 14-17, 1998
作者:  Wang YQ;  Liao XB;  Diao HW;  He J;  Ma ZX;  Yue GZ;  Shen SR;  Kong GL;  Zhao YW;  Li ZM;  Yun F;  Wang YQ Chinese Acad Sci Inst Semicond State Lab Surface Phys POB 912 Beijing 100083 Peoples R China.
Adobe PDF(958Kb)  |  收藏  |  浏览/下载：1232/287  |  提交时间：2010/10/29
Amorphous-silicon  Crystallization  Transistors  
High quality hydrogenated amorphous silicon films with significantly improved stability 会议论文
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507, SAN FRANCISCO, CA, APR 14-17, 1998
作者:  Sheng SR;  Liao XB;  Ma ZX;  Yue GZ;  Wang YQ;  Kong GL;  Sheng SR Chinese Acad Sci State Lab Surface Phys Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(390Kb)  |  收藏  |  浏览/下载：1319/281  |  提交时间：2010/10/29
A-si-h  Light Soaking  Photoconductivity  Increase