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Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Jiang WH;  Xu HZ;  Xu B;  Ye XL;  Zhou W;  Ding D;  Liang JB;  Wang ZG;  Jiang WH Chinese Acad Sci Inst Semicond Inst Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(320Kb)  |  收藏  |  浏览/下载：1387/285  |  提交时间：2010/11/15
Quantum Dots  High Index  Molecular Beam Epitaxy  Photoluminescence  Surface Segregation  Oriented Gaas  Ingaas  Islands  Wells  Disks  
Epitaxial growth of GaNAs/GaAs heterostructure materials 会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:  Lin YW;  Pan Z;  Li LH;  Zhou ZQ;  Wang H;  Zhang W;  Lin YW Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(195Kb)  |  收藏  |  浏览/下载：1533/289  |  提交时间：2010/11/15
Ganas  Dc Active N-2 Plasma  Molecular Beam Epitaxy  Nitrogen Content  Fourier Transform Infrared Spectroscopy Of Intensity  Band-gap Energy  Gaas1-xnx  Nitrogen  
A model of dislocations at the interface of the bonded wafers 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Han WH;  Yu JZ;  Wang LC;  Wei HZ;  Zhang XF;  Wang QM;  Han WH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(76Kb)  |  收藏  |  浏览/下载：1573/266  |  提交时间：2010/10/29
Wafer Bonding  Heteroepitaxy  Lattice Mismatch  Edge-like Dislocations  Thermal Stress  60 Degrees Dislocation Lines  Gaas