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Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Mo QW;  Fan TW;  Gong Q;  Wu J;  Wang ZG;  Bai YQ;  Zhang W;  Mo QW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(201Kb)  |  收藏  |  浏览/下载：1454/316  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Coherent Islands  Gaas  Growth  Dots  Dislocations  Temperature  Mechanisms  Si(001)  Ingaas  
Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Si JJ;  Yang QQ;  Wang HJ;  Wang QM;  Si JJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(796Kb)  |  收藏  |  浏览/下载：1191/189  |  提交时间：2010/10/29
Si/sige  Quantum Dot  Electroluminescence  Photoluminescence