SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Ⅲ族氮化物单/多层异质应变薄膜的制作方法
陈振; 陆大成; 刘祥林; 王晓晖; 袁海荣; 王占国
2002-08-21
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2001-01-12
Language中文
Application NumberCN01100454.1
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/3071
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈振,陆大成,刘祥林,等. Ⅲ族氮化物单/多层异质应变薄膜的制作方法[P]. 2002-08-21.
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