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无权访问的条目 期刊论文
Authors:  Tian, Xiaorang;   Meng, Chuizhou;   Zhao, Xin;   Liu, Bing;   Zhao, Guanchao;   Nie, Ge;   Yang, Guoyun;   Zhang, Guosong;   Han, Peide
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无权访问的条目 期刊论文
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无权访问的条目 期刊论文
Authors:  Zhaogang Wang;  Wentao Zhang;  Wenzhu Huang;  Peide Liu;  Fang Li
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无权访问的条目 期刊论文
Authors:  Peide Liu;  Wenzhu Huang;  Wentao Zhang;  Fang Li
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无权访问的条目 期刊论文
Authors:  Zhu, Xiaoning;  Zhu, Hongliang;  Liu, Dewei;  Huang, Yongguang;  Wang, Xiyuan;  Yu, Haijuan;  Wang, Shuai;  Lin, Xuechun;  Han, Peide
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一种制作白光发光二极管的方法 专利
专利类型: 发明, 申请日期: 2004-02-11, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈振;  韩培德;  陆大成;  刘祥林;  王晓晖;  朱勤生;  王占国
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Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
Authors:  Chen Z;  Chua SJ;  Yuan HR;  Liu XL;  Lu DC;  Han PD;  Wang ZG;  Chen Z Singapore MIT Alliance AMMNS E4-04-10NUS4 Engn Dr3 Singapore 117576 Singapore. 电子邮箱地址:
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Metalorganic Chemical Vapor Deposition  Semiconducting Iii-v Materials  Doped Al(x)Ga1-xn/gan Heterostructures  Carrier Confinement  Effect Transistors  Photoluminescence  Mobility  Heterojunction  Interface  Hfets  
无权访问的条目 期刊论文
Authors:  Han XX;  Chen Z;  Li DB;  Wu JJ;  Li JM;  Sun XH;  Liu XL;  Han PD;  Wang XH;  Zhu QS;  Wang ZG;  Han, XX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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一种单/多层异质量子点结构的制作方法 专利
专利类型: 发明, 申请日期: 2003-04-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈振;  陆大成;  韩培德;  刘祥林;  王晓晖;  李昱峰;  王占国
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无权访问的条目 期刊论文
Authors:  Chen Z;  Lu DC;  Liu XL;  Wang XH;  Han PD;  Wang D;  Yuan HR;  Wang ZG;  Li GH;  Fang ZL;  Chen Z,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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