Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures
	Wang H; Wang HL; Feng SL; Zhu HJ; Wang XD; Guo ZS; Ning D; Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	26th International Symposium on Compound Semiconducors
会议录名称	COMPOUND SEMICONDUCTORS 1999, (166)
页码	251-256
会议日期	AUG 22-26, 1999
会议地点	BERLIN, GERMANY
出版地	DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND
出版者	IOP PUBLISHING LTD
ISSN	0951-3248
ISBN	0-7503-0704-8
部门归属	chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
摘要	Confirmation of quantum dot lasing have been given by photoluminescence and electro-luminescence spectra. Energy levels of QD laser are distinctively resolved due to band filling effect, and the lasing energy of quantum dot laser is much lower than quantum well laser. The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally by deep level transient spectroscopy (DLTS). Such barrier has been predicted by previous theories and can be explained by the apexes appeared in the interface between InAs and GaAs caused by strain.
关键词	Electronic-structure Carrier Relaxation Energy-levels Spectroscopy
学科领域	半导体物理
主办者	Deutsch Forsch Gemeinsch.; IFV Kompetenzzentrum TEMA B.; AIXTRON AG.; DaimlerChrysler AG.; EPICHEM Ltd.; Freiberger Compound Mat GmbH.; Infineon Technologies AG.; RIBER GmbH.; United Monolith Semiconductors GmbH.; VTS CreaTec GmbH.; Wafer Technol Ltd.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14883
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wang H,Wang HL,Feng SL,et al. Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures[C]. DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND:IOP PUBLISHING LTD,2000:251-256.

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