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中国科学院半导体研究所机构知识库
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半导体集成技术工程研... [1]
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刘志强 [1]
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一种制备氮化镓基垂直结构发光二极管的方法
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专利类型: 发明, 专利号: CN200910081093.4, 公开日期: 2011-08-31
Inventors:
樊晶美
;
王良臣
;
刘志强
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Submit date：2011/08/31
