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具有超薄碳化硅中间层的硅基可协变衬底及制备方法 专利
专利类型: 发明, 申请日期: 2007-08-15, 公开日期: 2009-06-04, 2009-06-11
Inventors:  杨少延;  杨霏;  李成明;  范海波;  陈涌海;  刘志凯;  王占国
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