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具有超薄碳化硅中间层的硅基可协变衬底及制备方法
杨少延; 杨霏; 李成明; 范海波; 陈涌海; 刘志凯; 王占国
2007-08-15
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2006-02-08
Language中文
Application Number200610003071
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/3797
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 杨少延,杨霏,李成明,等. 具有超薄碳化硅中间层的硅基可协变衬底及制备方法[P]. 2007-08-15.
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200610003071.pdf（1107KB） 限制开放--Application Full Text
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