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InGaAsP/InP Bistability Triangle Microlasers 会议论文
, Shanghai, PEOPLES R CHINA, AUG 30-SEP 03, 2009
作者:  Huang YZ (Huang Yong-Zhen);  Yang YD (Yang Yue-De);  Wang SJ (Wang Shi-Jiang);  Xiao JL (Xiao Jin-Long);  Du Y (Du Yun)
Adobe PDF(298Kb)  |  收藏  |  浏览/下载：1582/318  |  提交时间：2010/06/04
Simulation on Gain Recovery of Quantum Dot Semiconductor Optical Amplifiers by Rate Equation 会议论文
NUSOD 2009: 9TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, PROCEEDINGS, Gwangju, SOUTH KOREA, SEP 14-17, 2009
作者:  Xiao JL (Xiao Jin-Long);  Yang YD (Yang Yue-De);  Huang YZ (Huang Yong-Zhen);  Xiao, JL, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(687Kb)  |  收藏  |  浏览/下载：1856/561  |  提交时间：2010/04/26
Dynamics  
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:  Wang, XH;  Wang, XL;  Xiao, HL;  Feng, C;  Wang, XY;  Wang, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(217Kb)  |  收藏  |  浏览/下载：1881/329  |  提交时间：2010/03/09
Gas Sensors  Hemt Structures  Mobility  Temperature  Transistors  Growth  Mocvd  Layer  
Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R 会议论文
ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Wang, XH;  Wan, XL;  Xiao, HL;  Feng, C;  Way, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM;  Wan, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(339Kb)  |  收藏  |  浏览/下载：1667/523  |  提交时间：2010/03/09
Hydrogen Sensor  Algan/gan Heterostructure  Schottky Diode