Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R
	Wang, XH; Wan, XL; Xiao, HL; Feng, C; Way, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM; Wan, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
	2008
会议名称	Conference on Advanced Materials and Devices for Sensing and Imaging III
会议录名称	ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III
页码	6829: R8291-R8291
会议日期	NOV 12-14, 2007
会议地点	Beijing, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	978-0-8194-7004-1
部门归属	[wang, xinhua; wan, xiaoliang; xiao, hongling; feng, chun; way, baozhu; yang, cuibai; wang, junxi; wang, ciomei; ran, junxue; hu, guoxin; li, jinmin] chinese acad sci, inst semicond, novel mat lab, beijing 100083, peoples r china
摘要	Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H-2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860 degrees C for 30 s in N-2 ambience. Both the forward and reverse current of the device increased greatly when exposed to H-2 gas. The sensor's responses under different hydrogen concentrations from 500ppm to 10% H-2 in N-2 at 300K were investigated. A shift of 0.45V at 297K is obtained at a fixed forward current for switching from N-2 to 10% H-2 in N-2. Time response of the sensor at a fixed bias of 0.5 V was also measured. The turn-on response of the device was rapid, while the recovery of the sensor at N-2 atmosphere was rather slow. But it recovered quickly when the device was exposed to the air. The decrease in the barrier height of the diode was calculated to be about 160meV upon introduction of 10% H-2 into the ambient. The sensitivity of the sensor is also calculated. Some thermodynamics analyses have been done according to the Langmuir isotherm equation.
关键词	Hydrogen Sensor Algan/gan Heterostructure Schottky Diode
学科领域	光电子学
主办者	SPIE.; Chinese Opt Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7842
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wan, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Wang, XH,Wan, XL,Xiao, HL,et al. Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2008:6829: R8291-R8291.

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