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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [2]
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李成明 [2]
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Patent [2]
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2008 [2]
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中文 [2]
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Document Type：专利
Date Issued：2008
Author：李成明
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一种具有薄氮化铪可协变层的硅基可协变衬底材料
专利
专利类型: 发明, 申请日期: 2008-07-02, 公开日期: 2009-06-04, 2009-06-11
Inventors:
杨少延
;
范海波
;
李成明
;
陈涌海
;
王占国
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View/Download：1633/178
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Submit date：2009/06/11
一种用于氧化锌外延薄膜生长的硅基可协变衬底材料
专利
专利类型: 发明, 申请日期: 2008-07-02, 公开日期: 2009-06-04, 2009-06-11
Inventors:
杨少延
;
范海波
;
李成明
;
陈涌海
;
王占国
Adobe PDF(843Kb)
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Favorite
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View/Download：1557/186
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Submit date：2009/06/11
