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SEMI OpenIR  > 中国科学院半导体研究所（2009年前）
一种用于氧化锌外延薄膜生长的硅基可协变衬底材料
杨少延; 范海波; 李成明; 陈涌海; 王占国
2008-07-02
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2006-12-28
Language中文
Application Number200610169750
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/4097
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 杨少延,范海波,李成明,等. 一种用于氧化锌外延薄膜生长的硅基可协变衬底材料[P]. 2008-07-02.
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200610169750.pdf（843KB） 限制开放--Application Full Text
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