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High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Zeng YP;  Cao X;  Cui LJ;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(148Kb)  |  收藏  |  浏览/下载：1289/394  |  提交时间：2010/11/15
Molecular Beam Epitaxy  High Electron Mobility Transistors  Density  
Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers 会议论文
JOURNAL OF ELECTRONIC MATERIALS, 28 (5), CHARLOTTESVILLE, VIRGINIA, JUN 24-26, 1998
作者:  Zhuang QD;  Li JM;  Zeng YP;  Pan L;  Chen YH;  Kong MY;  Lin LY;  Zhuang QD Chinese Acad Sci Inst Semicond Novel Mat Ctr POB 912 Beijing 100083 Peoples R China.
Adobe PDF(177Kb)  |  收藏  |  浏览/下载：1388/321  |  提交时间：2010/11/15
InGaas Gaas Quantum Dots  Infrared Absorption  Self-organization  X-ray-diffraction  Islands  Transitions  
Self-organization of the InGaAs GaAs quantum dots superlattice 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Zhuang QD;  Li HX;  Pan L;  Li JM;  Kong MY;  Lin LY;  Zhuang QD Chinese Acad Sci Inst Semicond Novel Mat Ctr Beijing 100083 Peoples R China.
Adobe PDF(130Kb)  |  收藏  |  浏览/下载：1282/339  |  提交时间：2010/11/15
X-ray-diffraction  Islands  Surfaces  Growth  
Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions 会议论文
ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES, 523, SAN FRANCISCO, CA, APR 15-16, 1998
作者:  Wang HM;  Zeng YP;  Pan L;  Zhou HW;  Zhu ZP;  Kong MY;  Wang HM Chinese Acad Sci Inst Semicond Div Novel Mat POB 912 Beijing 100083 Peoples R China.
Adobe PDF(1119Kb)  |  收藏  |  浏览/下载：882/155  |  提交时间：2010/10/29