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High-speed analog DFB laser module operated in direct modulation for Ku-band 会议论文
Proceedings of SPIE-The International Society for Optical Engineering vol.7844: Art. No. 78440P 2010, Beijing, PEOPLES R CHINA, OCT 18-19, 2010
Authors:  Liu Y (Liu Yu);  Man JW (Man Jiang Wei);  Han W (Han Wei);  Wang X (Wang Xin);  Yuan HQ (Yuan Hai Qing);  Zhu HL (Zhu Hong Liang);  Xie LA (Xie Liang);  Zhu NH (Zhu Ning Hua)
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Solid-state qubit measurement with single electron transistors 会议论文
SOLID-STATE QUANTUM COMPUTING, Taipei, TAIWAN, JUN 23-27, 2008
Authors:  Jiao, HJ;  Li, F;  Wang, SK;  Li, XQ;  Jiao, HJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(714Kb)  |  Favorite  |  View/Download:1840/418  |  Submit date:2010/03/09
Solid-state Qubit  Single-electron-transistor  Quantum Measurement  Number-resolved Master Equation  
Fabrication and characterization of TO packaged high-speed laser modules - art. no. 682407 会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
Authors:  Wen, JM;  Liu, Y;  Wang, X;  Yuan, HQ;  Xie, L;  Zhu, NH;  Zhu, NH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(163Kb)  |  Favorite  |  View/Download:1944/508  |  Submit date:2010/03/09
Equivalent Circuits  Fp Laser Modules  Dfb Laser Modules  Vcsel Modules  Through Hole (To) Packaging  
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
Authors:  Sun, GS (Sun, Guosheng);  Ning, J (Ning, Jin);  Gong, QC (Gong, Quancheng);  Gao, X (Gao, Xin);  Wang, L (Wang, Lei);  Liu, XF (Liu, Xingfang);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)  |  Favorite  |  View/Download:1419/203  |  Submit date:2010/03/29
Homoepitaxial Growth  Low-pressure Hot-wall Cvd  Structural And Optical Characteristics  Intentional Doping  Schottky Barrier Diodes  
The effect of Fabry-Perot interference on the packaging of SOI-based optoelectronic devices 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
Authors:  Xin HL;  Chen P;  Li F;  Wang CX;  Cao P;  Liu YL;  Xin, HL, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Optoelect, Beijing 100083, Peoples R China.
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A low power consumption thermo-optic variable optical attenuator based on SOI material 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
Authors:  Fang, Q;  Li, F;  Wang, CX;  Xin, HL;  Liu, YL;  Fang, Q, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(138Kb)  |  Favorite  |  View/Download:1154/240  |  Submit date:2010/03/29