Knowledge Management System Of Institute of Semiconductors,CAS
| The effect of Fabry-Perot interference on the packaging of SOI-based optoelectronic devices | |
| Xin HL; Chen P; Li F; Wang CX; Cao P; Liu YL; Xin, HL, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Optoelect, Beijing 100083, Peoples R China. | |
| 2004 | |
| Conference Name | 7th International Conference on Solid-State and Integrated Circuits Technology |
| Source Publication | 2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY |
| Pages | VOLS 1- 3 PROCEEDINGS: 2021-2024 |
| Conference Date | OCT 18-21, 2004 |
| Conference Place | Beijing, PEOPLES R CHINA |
| Publication Place | 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Publisher | IEEE |
| ISBN | 0-7803-8511-X |
| metadata_83 | chinese acad sci, inst semicond, res & dev ctr optoelect, beijing 100083, peoples r china |
| Abstract | During the packaging of optoelectrome device, a problem always met is the instability of output power. The main effect causing this problem, Fabry-Perot interference, is discussed in this paper. Both theoretical analysis and experimental test are carried out and in good agreement. As an example of avoiding the disadvantage of Fabry-Perot interference, the packaging process of Silicon-on-Insulator (SOI) based Variable Optical Attenuator(VOA) is shown at last. |
| Subject Area | 光电子学 |
| Funding Organization | Chinese Inst Elect.; IEEE Beijing Sect.; IEEE Elect Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid-State Circuits Soc.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; IEE Elect Div.; URSI Commiss D.; Inst Elect Engineers Korea.; Natl Nat Sci Fdn China.; Beijing Municipal Bureau Ind Dev.; Peking Univ. |
| Indexed By | 其他 |
| Language | 英语 |
| Document Type | 会议论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/10104 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Corresponding Author | Xin, HL, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Optoelect, Beijing 100083, Peoples R China. |
| Recommended Citation GB/T 7714 | Xin HL,Chen P,Li F,et al. The effect of Fabry-Perot interference on the packaging of SOI-based optoelectronic devices[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:VOLS 1- 3 PROCEEDINGS: 2021-2024. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2435.pdf（142KB） | 限制开放 | -- | Application Full Text | |||
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