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Donor defect in P-diffused bulk ZnO single crystal 会议论文
, Rio de Janeiro, BRAZIL, 2009
作者:  Zhao YW (Zhao Youwen);  Zhang R (Zhang Rui);  Zhang F (Zhang Fan);  Dong ZY (Dong Zhiyuan);  Yang J (Yang Jun);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China
Adobe PDF(321Kb)  |  收藏  |  浏览/下载：2333/471  |  提交时间：2010/10/11
Zinc Oxide  Doping  Defect  
Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Zhao, YW;  Zhang, F;  Zhang, R;  Dong, ZY;  Wei, XC;  Zeng, YP;  Li, JM;  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(340Kb)  |  收藏  |  浏览/下载：1924/527  |  提交时间：2010/03/09
Zinc Oxide  Defect  Vacancy  
Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration 会议论文
SMIC-XIII2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Zhao, YW;  Dong, ZY;  Zhang, YH;  Li, CJ;  Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(230Kb)  |  收藏  |  浏览/下载：1322/312  |  提交时间：2010/03/29
Deep-level Defects  Fe-doped Inp  Grown Inp  Spectroscopy  Resonance  Wafer  
1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Zhang W;  Pan Z;  Li LH;  Zhang RK;  Lin YW;  Wu RG;  Zhang W Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1085/0  |  提交时间：2010/10/29
Gainnas  Photodetector  Resonant Cavity Enhanced  High Speed Property  Molecular-beam Epitaxy  Schottky Photodiodes  Performance  Efficiency  Operation  Bandwidth  Design  Si  
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Pan Z;  Li LH;  Zhang W;  Wang XU;  Lin YW;  Wu RH;  Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(124Kb)  |  收藏  |  浏览/下载：1240/219  |  提交时间：2010/11/15
Adsorption  Characterization  Radiation  Molecular Beam Epitaxy  Nitrides  Surface-emitting Laser  Quantum-wells  Operation  Range  
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH;  Li LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(109Kb)  |  收藏  |  浏览/下载：1435/268  |  提交时间：2010/11/15
Characterization  Defects  X-ray Diffraction  Molecular Beam Epitaxy  Nitrides  Gaas  
Epitaxial growth of GaNAs/GaAs heterostructure materials 会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:  Lin YW;  Pan Z;  Li LH;  Zhou ZQ;  Wang H;  Zhang W;  Lin YW Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(195Kb)  |  收藏  |  浏览/下载：1527/289  |  提交时间：2010/11/15
Ganas  Dc Active N-2 Plasma  Molecular Beam Epitaxy  Nitrogen Content  Fourier Transform Infrared Spectroscopy Of Intensity  Band-gap Energy  Gaas1-xnx  Nitrogen