中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共26条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
GaN-based violet lasers grown on sapphire with a novel facet fabrication method 会议论文
, 中国深圳, 2015
作者:  Yingdong Tian;  Yun Zhang;  Jianchang Yan;  Xiang Chen;  Yanan Guo;  Xuecheng Wei;  Junxi Wang;  Jinmin Li
Adobe PDF(336Kb)  |  收藏  |  浏览/下载：1020/5  |  提交时间：2016/06/02
Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Lei W;  Chen YH;  Jin P;  Xu B;  Ye XL;  Wang ZG;  Huang XQ;  Lei, W, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(340Kb)  |  收藏  |  浏览/下载：1467/261  |  提交时间：2010/03/29
Lateral Intersubband Photocurrent  
Research on the band-gap of InN grown on siticon substrates 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Xiao, HL;  Wang, XL;  Wang, JX;  Zhang, NH;  Liu, HX;  Zeng, YP;  Li, JM;  Xiao, HL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(164Kb)  |  收藏  |  浏览/下载：1416/408  |  提交时间：2010/03/29
Molecular-beam Epitaxy  Wurtzite Inn  Nitride  Absorption  Alloys  Films  
Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots 会议论文
JOURNAL OF LUMINESCENCE, Shanghai, PEOPLES R CHINA, AUG 01-05, 2005
作者:  Wang FZ;  Chen ZH;  Sun J;  Bai LH;  Huang SH;  Xiong H;  Jin P;  Wang ZG;  Shen SC;  Chen, ZH, Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China. 电子邮箱地址: zhanghai@fudan.edu.cn
Adobe PDF(269Kb)  |  收藏  |  浏览/下载：1722/293  |  提交时间：2010/03/29
Quantum Dots  
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:  Sun, Z (Sun, Z.);  Xu, ZY (Xu, Z. Y.);  Yang, XD (Yang, X. D.);  Sun, BQ (Sun, B. Q.);  Ji, Y (Ji, Y.);  Zhang, SY (Zhang, S. Y.);  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)  |  收藏  |  浏览/下载：1736/401  |  提交时间：2010/03/29
Gainnas/gaas Quantum Wells  Optical Properties  Nonradiative Recombination Effect  Time-resolved Photoluminescence  Pl Decay Dynamics  Pl Thermal Quenching  Molecular-beam Epitaxy  Gaasn Alloys  Excitation  
An analysis and simulation about conditioned launch for very short reach (VSR-4) 会议论文
Optical Transmission Switching and Subsystem II丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Beijing, PEOPLES R CHINA, NOV 09-11, 2004
作者:  Chen XB;  Jia JC;  Chen HD;  Zhou Y;  Shen RX;  Zuo C;  Chen, XB, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(206Kb)  |  收藏  |  浏览/下载：1514/310  |  提交时间：2010/03/29
Conditioned Launch  
Upconversion emission of a Er3+-doped glass microsphere under 633 nm excitation 会议论文
MICROELECTRONICS JOURNAL, 35 (4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Wang JY;  Ji GR;  Jin P;  Zhao LJ;  Zhang CZ;  Wang JY Bewing Univ Technol Coll Appl Sci Beijing 100022 Peoples R China. 电子邮箱地址: wangjiyou@bjut.edu.cn
Adobe PDF(94Kb)  |  收藏  |  浏览/下载：1311/244  |  提交时间：2010/10/29
Upconversion  Doped-er3++ Glass Microsphere  Morphology-dependent Resonances  
Intense room temperature near infrared emission from Al (3+) and Yb3+ ions 会议论文
2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Hong Kong, PEOPLES R CHINA, SEP 29-OCT 01, 2004
作者:  Zhang JG;  Cheng BW;  Gao, JH;  Yu JZ;  Wang QM;  Zhang, JG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(190Kb)  |  收藏  |  浏览/下载：1263/273  |  提交时间：2010/03/29
Fluorescence  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1558/405  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain  
Optical study of localized and delocalized states in GaAsN/GaAs 会议论文
GAN AND RELATED ALLOYS - 2003, 798, Boston, MA, DEC 01-05, 2003
作者:  Xu ZY;  Luo XD;  Yang XD;  Tan PH;  Yang CL;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Xu ZY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(190Kb)  |  收藏  |  浏览/下载：1639/334  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Alloys  Gaas1-xnx  Photoluminescence  Relaxation