Intense room temperature near infrared emission from Al (3+) and Yb3+ ions

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Intense room temperature near infrared emission from Al (3+) and Yb3+ ions
	Zhang JG; Cheng BW; Gao, JH; Yu JZ; Wang QM; Zhang, JG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
	2004
会议名称	1st IEEE International Conference on Group IV Photonics
会议录名称	2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS
页码	64-66
会议日期	SEP 29-OCT 01, 2004
会议地点	Hong Kong, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-8474-1
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	Intense near infrared emission was observed from Al3+ and Yb3+ ions co-implanted SiO2 film on silicon. It was found that the addition of Al3+ ions could remarkably improve the photoluminescence efficiency of Yb3+-implanted SiO2 film. No excitation power saturation was observed and trivial temperature quenching factor of 2 was achieved.
关键词	Fluorescence
学科领域	光电子学
主办者	IEEE.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10054
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhang, JG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Zhang JG,Cheng BW,Gao, JH,et al. Intense room temperature near infrared emission from Al (3+) and Yb3+ ions[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:64-66.

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