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High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Wang ZM;  Wang LM;  He GP;  Yang YL;  Zhang HQ;  Zhou XN;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(189Kb)  |  收藏  |  浏览/下载：1232/273  |  提交时间：2010/10/29
Ingaasp  Strained Layer Quantum Well  Laser Diode  Mocvd  
Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Yang GW;  Xu ZT;  Xu JY;  Ma XY;  Zhang JM;  Chen LH;  Yang GW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(356Kb)  |  收藏  |  浏览/下载：1432/382  |  提交时间：2010/10/29
Strained Quantum Well  Semiconductor Lasers  
High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES, 3419, TAIPEI, TAIWAN, JUL 09-11, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Lian P;  Wang LM;  Zhang XY;  Yang YL;  Zhang HQ;  Wang GH;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(307Kb)  |  收藏  |  浏览/下载：1288/275  |  提交时间：2010/10/29
Algainp  Quantum Well  Laser Diode  Mocvd  
The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process 会议论文
NITRIDE SEMICONDUCTORS, 482, BOSTON, MA, DEC 01-05, 1997
作者:  Zheng LX;  Liang JW;  Yang H;  Li JB;  Wang YT;  Xu DP;  Li XF;  Duan LH;  Hu XW;  Zheng LX Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(341Kb)  |  收藏  |  浏览/下载：991/211  |  提交时间：2010/10/29
Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Si JJ;  Yang QQ;  Wang HJ;  Wang QM;  Si JJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(796Kb)  |  收藏  |  浏览/下载：1193/189  |  提交时间：2010/10/29
Si/sige  Quantum Dot  Electroluminescence  Photoluminescence  
Photoluminescence measurements on erbium-doped silicon 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Lei HB;  Yang QQ;  Ou HY;  Wang QM;  Lei HB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(310Kb)  |  收藏  |  浏览/下载：1272/233  |  提交时间：2010/10/29
Erbium-doped Silicon  Photoluminescence  Energy Transfer  
The study of single mode 650nm AlGaInP quantum well laser diodes for DVD 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Wang LM;  Yang YL;  Zhang HQ;  Zhang XY;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(159Kb)  |  收藏  |  浏览/下载：1244/250  |  提交时间：2010/10/29
Algainp  Quantum Well  Laser Diode  Mocvd  Dvd  
Electro-mass multi odor sensor 会议论文
TECHNICAL DIGEST OF THE SEVENTH INTERNATIONAL MEETING ON CHEMICAL SENSORS, BEIJING, PEOPLES R CHINA, JUL 27-30, 1998
作者:  Sun A;  Yang YA;  Jiang YL;  Fan ZJ;  Liu QD;  Li XQ;  Zhou QZ;  Sun A Acad Sinica Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：953/0  |  提交时间：2010/10/29
Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix 会议论文
APPLIED SURFACE SCIENCE, 123, CARDIFF, WALES, JUN 23-27, 1997
作者:  Chen YH;  Yang Z;  Wang ZG;  Xu B;  Liang JB;  Qian JJ;  Chen YH Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong.
Adobe PDF(241Kb)  |  收藏  |  浏览/下载：1370/301  |  提交时间：2010/11/15
Znse/gaas Interface  States  
High-field ferromagnetic resonance in fine particles 会议论文
PHYSICA B-CONDENSED MATTER, 246, SYDNEY, AUSTRALIA, AUG 04-06, 1997
作者:  Respaud M;  Goiran M;  Yang F;  Broto JM;  Ely TO;  Amiens C;  Chaudret B;  Askenazy S;  Broto JM Inst Natl Sci Appl SNCMP Complexe Sci Rangueil F-31077 Toulouse France. 电子邮箱地址: Broto@insatlse.fr
Adobe PDF(101Kb)  |  收藏  |  浏览/下载：1255/187  |  提交时间：2010/11/15
High-field Ferromagnetic Resonance  Fine Particles