High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD

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	High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD
	Ma XY; Cao Q; Wang ST; Guo L; Lian P; Wang LM; Zhang XY; Yang YL; Zhang HQ; Wang GH; Chen LH; Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
	1998
会议名称	SPIE Conference on Optoelectronic Materials and Devices
会议录名称	OPTOELECTRONIC MATERIALS AND DEVICES, 3419
页码	131-136
会议日期	JUL 09-11, 1998
会议地点	TAIPEI, TAIWAN
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-2873-6
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Low threshold current and high temperature operation of 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) are reported in this paper. 650nm laser diodes with threshold current as low as 22-24mA at room temperature, and the operating temperature over 90 degrees C at CW output power 5 mW were achieved in this study. These lasers are stable during 72 hours burn in under 5mW at 90 degrees C.
关键词	Algainp Quantum Well Laser Diode Mocvd
学科领域	光电子学
主办者	SPIE, Taiwan Chapter.; Photon Ind Dev Assoc.; Natl Sci Council, Taiwan.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13873
专题	中国科学院半导体研究所（2009年前）
通讯作者	Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Ma XY,Cao Q,Wang ST,et al. High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1998:131-136.

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