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Optical characterization of the Ge/Si (001) islands in multilayer structure 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Huang CJ;  Zuo YH;  Li C;  Li DZ;  Cheng BW;  Luo LP;  Yu JZ;  Wang QM;  Huang CJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：1407/297  |  提交时间：2010/10/29
Ge/si Islands  Quantum Dot  Band Alignment  Pl  Si/si1-xgex Quantum-wells  Stranski-krastanov Growth  Ii Band Alignment  Ge Islands  Temperature-dependence  Photoluminescence  Layers  Luminescence  Organization  Mechanism  
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2, KANAZAWA, JAPAN, MAY 27-31, 2001
作者:  Niu ZC;  Wang XD;  Miao ZH;  Lan Q;  Kong YC;  Zhou DY;  Feng SL;  Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1261/0  |  提交时间：2010/10/29
Molecular Beam Epitaxy  Ingaas Islands  Photolumineseence  Line-width  1.3 Mu-m  Inas/gaas Quantum Dots  Optical-properties  Cap Layer  Gaas  Luminescence  Strain  
Photoluminescence from carbon nanotubes 会议论文
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 87, OSAKA, JAPAN, SEP 17-22, 2000
作者:  Han HX;  Li GH;  Ge WK;  Wang ZP;  Xu ZY;  Xie SS;  Chang BH;  Sun LF;  Wang BS;  Xu G;  Su ZB;  Han HX Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
收藏  |  浏览/下载：911/0  |  提交时间：2010/10/29
Electronic-structure  
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Pan Z;  Li LH;  Zhang W;  Wang XU;  Lin YW;  Wu RH;  Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(124Kb)  |  收藏  |  浏览/下载：1228/219  |  提交时间：2010/11/15
Adsorption  Characterization  Radiation  Molecular Beam Epitaxy  Nitrides  Surface-emitting Laser  Quantum-wells  Operation  Range  
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH;  Li LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(109Kb)  |  收藏  |  浏览/下载：1425/268  |  提交时间：2010/11/15
Characterization  Defects  X-ray Diffraction  Molecular Beam Epitaxy  Nitrides  Gaas  
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Qu B;  Zheng XH;  Wang YT;  Xu DP;  Lin SM;  Yang H;  Liang JW;  Qu B Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelectron POB 912 Beijing 100083 Peoples R China.
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1650/385  |  提交时间：2010/11/15
X-ray Diffraction  Nitrides  Semiconducting Iii-v Materials  Phase  Films  
High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Zeng YP;  Cao X;  Cui LJ;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(148Kb)  |  收藏  |  浏览/下载：1295/394  |  提交时间：2010/11/15
Molecular Beam Epitaxy  High Electron Mobility Transistors  Density  
Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition 会议论文
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188 (2), DENVER, COLORADO, JUL 16-20, 2001
作者:  Sun XL;  Yang H;  Zhu JJ;  Wang YT;  Chen Y;  Li GH;  Wang ZG;  Sun XL Ohio State Univ Dept Elect Engn Columbus OH 43210 USA.
Adobe PDF(110Kb)  |  收藏  |  浏览/下载：1280/285  |  提交时间：2010/11/15
Gallium Nitride  Luminescence  Bulk  
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Niu ZC;  Wang XD;  Miao ZH;  Feng SL;  Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(171Kb)  |  收藏  |  浏览/下载：1193/221  |  提交时间：2010/11/15
Crystal Morphology  Quantum Dots  Molecular Beam Epitaxy  Semiconducting Gallium Arsenide  Semiconducting Indium Gallium Arsenide  1.35 Mu-m  Gaas-surfaces  Photoluminescence  Islands  
Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223 (1), SAPPORO, JAPAN, SEP 24-28, 2000
作者:  Li GH;  Chen Y;  Fung ZL;  Ding K;  Han HX;  Zhou W;  Wang ZG;  Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(165Kb)  |  收藏  |  浏览/下载：1296/322  |  提交时间：2010/11/15
Hydrostatic-pressure  Photoluminescence  Gaas  Luminescence  Growth  Insb  Gasb