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无权访问的条目 期刊论文
作者:  Feng G;  Zheng XH;  Zhu JJ;  Shen XM;  Zhang BS;  Zhao DG;  Sun YP;  Zhang ZH;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(225Kb)  |  收藏  |  浏览/下载：963/290  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Zheng XH;  Qu B;  Wang YT;  Yang H;  Liang JW;  Han JY;  Zheng XH,Chinese Acad Sci,Inst Semicond,Beijing 100083,Peoples R China.
Adobe PDF(1270Kb)  |  收藏  |  浏览/下载：780/182  |  提交时间：2010/08/12
In situ annealing during the growth of relaxed SiGe 会议论文
OPTICAL AND INFRARED THIN FILMS, 4094, SAN DIEGO, CA, 36739
作者:  Li DZ;  Huang CJ;  Cheng BW;  Wang HJ;  Yu Z;  Zhang CH;  Yu JZ;  Wang QM;  Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(1540Kb)  |  收藏  |  浏览/下载：1379/204  |  提交时间：2010/10/29
Ultrahigh Vacuum Chemical Vapor Deposition  Sige  Refractive High Energy Electron Diffraction  Tansmission Electron Microscopy  Double Crystal X-ray Diffraction  Mobility 2-dimensional Electron  Critical Thickness  Strained Layers  Ge  Relaxation  Epilayers  Si1-xgex  Gesi/si  Gases  
The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:  Sun XL;  Wang YY;  Yang H;  Li JB;  Zheng LX;  Xu DP;  Wang ZG;  Sun XL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol Beijing 100083 Peoples R China.
Adobe PDF(206Kb)  |  收藏  |  浏览/下载：1723/311  |  提交时间：2010/11/15
Metalorganic Chemical Vapor Deposition  Cubic Gan  Hexagonal Phase Content  4-circle X-ray Double Crystal Diffraction  Molecular-beam Epitaxy  Gallium Nitride  Thin-films  Silicon  Gaas  
无权访问的条目 期刊论文
作者:  Sun XL;  Wang YY;  Yang H;  Li JB;  Zheng LX;  Xu DP;  Wang ZG;  Sun XL,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(206Kb)  |  收藏  |  浏览/下载：1004/364  |  提交时间：2010/08/12
A study on GaP/Si heterostructures grown by GS-MBE 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Yu JZ;  Chen BW;  Yu Z;  Wang QM;  Yu JZ Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(243Kb)  |  收藏  |  浏览/下载：1206/241  |  提交时间：2010/10/29
Gap/si Heterostructure  Gs-mbe  Lattice Match  X-ray Double Crystal Diffraction  Photoluminescence (Pl)