A study on GaP/Si heterostructures grown by GS-MBE

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	A study on GaP/Si heterostructures grown by GS-MBE
	Yu JZ; Chen BW; Yu Z; Wang QM; Yu JZ Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	1998
会议名称	Conference on Integrated Optoelectronics II
会议录名称	INTEGRATED OPTOELECTRONICS II, 3551
页码	9-12
会议日期	SEP 18-19, 1998
会议地点	BEIJING, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3012-9
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	GaP/Si is a promoting heterostructure for Si-based optoelectronic devices since lattice constants of GaP and Si are so closed that they can match with each other. GaP was successfully grow on (100) Si subtracts by Gas-Source Molecular Bean Epitaxy (GS-MBE) in the study. The GaP/Si heterostructure was characterized by X-ray double crystal diffraction, Anger electron spectrograph, X-ray photonic spectrograph and photoluminescence (PL) measurements. The results showed that the epitaxial GaP layers are single crystalline, in which a parallel to and a (perpendicular to)are 0.54322 and 0.54625 nm, respectively. The peaks in PL spectra of GaP epitaxial layer grown on Si are 650, 627 and 640 nm, respectively. The study demonstrated that GaP/Si is a kind of lattice matched heterostructures and will be a promoting materials for future integrated photonics.
关键词	Gap/si Heterostructure Gs-mbe Lattice Match X-ray Double Crystal Diffraction Photoluminescence (Pl)
学科领域	光电子学
主办者	SPIE Int Soc Opt Engn.; COS Chinese Opt Soc.; COEMA.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13855
专题	中国科学院半导体研究所（2009年前）
通讯作者	Yu JZ Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Yu JZ,Chen BW,Yu Z,et al. A study on GaP/Si heterostructures grown by GS-MBE[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1998:9-12.

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