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Surface morphology evolution of strained InAs/GaAs(331)a films 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Gong, M (Gong, Meng);  Fang, ZD (Fang, Zhidan);  Miao, ZH (Miao, Zhenhua);  Niu, ZC (Niu, Zhichuan);  Gong, M, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(287Kb)  |  收藏  |  浏览/下载：1467/288  |  提交时间：2010/03/29
Surface Morphology Evolution  Inas Nanostructures  Island-pit Pairs  Molecular-beam Epitaxy  Quantum Dots  Cooperative Nucleation  Heteroepitaxy  Transition  Islands  Growth  
无权访问的条目 期刊论文
作者:  Zhang ZC;  Chen YH;  Li DB;  Zhang FQ;  Yang SY;  Ma BS;  Sun GS;  Wang ZG;  Zhang XP;  Zhang ZC,Chinese Acad Sci,Lab Semicond Mat Sci,Inst Semicond,Beijing 100083,Peoples R China.
Adobe PDF(332Kb)  |  收藏  |  浏览/下载：1154/371  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Lu YA;  Liu XL;  Lu DC;  Yuan HR;  Hu GQ;  Wang XH;  Wang ZG;  Duan XF;  Lu DC,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(313Kb)  |  收藏  |  浏览/下载：1240/483  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Lu Y;  Liu XL;  Lu DC;  Yuan HR;  Chen Z;  Fan TW;  Li YF;  Han PD;  Wang XH;  Wang D;  Wang ZG;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(278Kb)  |  收藏  |  浏览/下载：1193/359  |  提交时间：2010/08/12
A model of dislocations at the interface of the bonded wafers 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Han WH;  Yu JZ;  Wang LC;  Wei HZ;  Zhang XF;  Wang QM;  Han WH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(76Kb)  |  收藏  |  浏览/下载：1663/266  |  提交时间：2010/10/29
Wafer Bonding  Heteroepitaxy  Lattice Mismatch  Edge-like Dislocations  Thermal Stress  60 Degrees Dislocation Lines  Gaas