A model of dislocations at the interface of the bonded wafers

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	A model of dislocations at the interface of the bonded wafers
	Han WH; Yu JZ; Wang LC; Wei HZ; Zhang XF; Wang QM; Han WH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	Conference on Optical Interconnects for Telecommunication and Data Communications
会议录名称	OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225
页码	116-119
会议日期	NOV 08-10, 2000
会议地点	BEIJING, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3896-0
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	Wafer bonding is regardless of lattice mismatch in the integration of dissimilar semiconductor materials. This technology differs from the heteroepitaxy mainly in the mechanism of generating dislocations at the interface. A model of dislocations at the bonded interface is proposed in this paper. Edge-like dislocations, which most efficiently relax the strain, are predominant at the bonded interface. But the thermal stress associated with large thermal expansion misfit may drive dislocations away from the bonded interface upon cooling.
关键词	Wafer Bonding Heteroepitaxy Lattice Mismatch Edge-like Dislocations Thermal Stress 60 Degrees Dislocation Lines Gaas
学科领域	光电子学
主办者	China Opt & Optoelectr Manufacturers Assoc.; Chinese Phys Soc.; SPIE.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13723
专题	中国科学院半导体研究所（2009年前）
通讯作者	Han WH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Han WH,Yu JZ,Wang LC,et al. A model of dislocations at the interface of the bonded wafers[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2000:116-119.

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