中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共3条，第1-3条 帮助

已选(0)清除 条数/页：   排序方式：
Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Li, Y;  Yi, XY;  Wang, XD;  Guo, JX;  Wang, LC;  Wang, GH;  Yang, FH;  Zeng, YP;  Li, JM;  Li, Y, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(701Kb)  |  收藏  |  浏览/下载：4484/1521  |  提交时间：2010/03/09
Gan  Led  Plasma  Damage  Etch  Icp  Pecvd  
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 会议论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 426 (1), FLORENCE, ITALY, MAR 04-06, 1998
作者:  Li Z;  Dezilllie B;  Eremin V;  Li CJ;  Verbitskaya E;  Li Z Brookhaven Natl Lab Bldg 535BPOB 5000 Upton NY 11973 USA.
Adobe PDF(429Kb)  |  收藏  |  浏览/下载：1725/327  |  提交时间：2010/11/15
Strip Detectors  Silicon Detectors  Annealing  Simulation  Irradiation  N-eff  Junction Detectors  Radiation-damage  Models  
无权访问的条目 期刊论文
作者:  Li Z;  Dezilllie B;  Eremin V;  Li CJ;  Verbitskaya E;  Li Z,Brookhaven Natl Lab,Bldg 535B,POB 5000,Upton,NY 11973 USA.
Adobe PDF(429Kb)  |  收藏  |  浏览/下载：877/250  |  提交时间：2010/08/12