First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)
	Li Z; Dezilllie B; Eremin V; Li CJ; Verbitskaya E; Li Z Brookhaven Natl Lab Bldg 535BPOB 5000 Upton NY 11973 USA.
	1999
会议名称	2nd International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices
会议录名称	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 426 (1)
页码	38-46
会议日期	MAR 04-06, 1998
会议地点	FLORENCE, ITALY
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0168-9002
部门归属	brookhaven natl lab, upton, ny 11973 usa; ras, af ioffe physicotech inst, st petersburg, russia; chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.
关键词	Strip Detectors Silicon Detectors Annealing Simulation Irradiation N-eff Junction Detectors Radiation-damage Models
学科领域	半导体物理
主办者	Univ Florence.; Ist Nazl Fis Nucl.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15047
专题	中国科学院半导体研究所（2009年前）
通讯作者	Li Z Brookhaven Natl Lab Bldg 535BPOB 5000 Upton NY 11973 USA.
推荐引用方式 GB/T 7714	Li Z,Dezilllie B,Eremin V,et al. First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,1999:38-46.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
3015.pdf（429KB）			限制开放	--	请求全文