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Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Zhao C;  Chen YH;  Zhao M;  Zhang CL;  Xu B;  Yu LK;  Sun J;  Lei W;  Wang ZG;  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: czhao@semi.ac.cn
Adobe PDF(330Kb)  |  收藏  |  浏览/下载：1865/335  |  提交时间：2010/03/29
Monte Carlo Simulation  
Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Islam MR;  Chen NF;  Yamada M;  Islam, MR, Khulna Univ Engn & Technol, Dept Elect & Elect Engn, Khulna 920300, Bangladesh. 电子邮箱地址: islambit@yahoo.com
Adobe PDF(159Kb)  |  收藏  |  浏览/下载：1369/260  |  提交时间：2010/03/29
Raman Scattering  
Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Zhou HY;  Qu SC;  Wang ZG;  Liang LY;  Cheng BC;  Liu JP;  Peng WQ;  Zhou, HY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhouhy@mail.semi.ac.cn
Adobe PDF(164Kb)  |  收藏  |  浏览/下载：2138/369  |  提交时间：2010/03/29
Anodic Alumina Films  
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Li, Z (Li, Z.);  Li, CJ (Li, C. J.);  Li, Z, Brookhaven Natl Lab, Upton, NY 11973 USA. 电子邮箱地址: zhengl@bnl.gov
Adobe PDF(175Kb)  |  收藏  |  浏览/下载：1472/373  |  提交时间：2010/03/29
Dlts  
Structure and visible luminescence of ZnO nanoparticles 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Peng, WQ (Peng, W. Q.);  Qu, SC (Qu, S. C.);  Cong, GW (Cong, G. W.);  Wang, ZG (Wang, Z. G.);  Peng, WQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wqpeng@semi.ac.cn
Adobe PDF(139Kb)  |  收藏  |  浏览/下载：2023/624  |  提交时间：2010/03/29
Nanoparticles  
Electron irradiation-induced defects in InP pre-annealed at high temperature 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Zhao, YW (Zhao, Y. W.);  Dong, ZY (Dong, Z. Y.);  Deng, AH (Deng, A. H.);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(147Kb)  |  收藏  |  浏览/下载：1335/254  |  提交时间：2010/03/29
Indium Phosphide  
Defect influence on luminescence efficiency of GaN-based LEDs 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Li SP (Li Shuping);  Fang ZL (Fang Zhilai);  Chen HY (Chen Hangyang);  Li JC (Li Jinchai);  Chen XH (Chen Xiaohong);  Yuan XL (Yuan Xiaoli);  Sekiguchi T (Sekiguchi Takashi);  Wang QM (Wang Qiming);  Kang JY (Kang Junyong);  Kang, JY, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. 电子邮箱地址: jykang@xmu.edu.cn
Adobe PDF(142Kb)  |  收藏  |  浏览/下载：1577/288  |  提交时间：2010/03/29
Defects  
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Sun, GS (Sun, G. S.);  Liu, XF (Liu, X. F.);  Gong, QC (Gong, Q. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Li, JY (Li, J. Y.);  Zeng, YP (Zeng, Y. P.);  Li, JM (Li, J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1409/281  |  提交时间：2010/03/29
4h-sic  
Upconversion emission of a Er3+-doped glass microsphere under 633 nm excitation 会议论文
MICROELECTRONICS JOURNAL, 35 (4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Wang JY;  Ji GR;  Jin P;  Zhao LJ;  Zhang CZ;  Wang JY Bewing Univ Technol Coll Appl Sci Beijing 100022 Peoples R China. 电子邮箱地址: wangjiyou@bjut.edu.cn
Adobe PDF(94Kb)  |  收藏  |  浏览/下载：1454/244  |  提交时间：2010/10/29
Upconversion  Doped-er3++ Glass Microsphere  Morphology-dependent Resonances  
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 6 (5-6), Sendai, JAPAN, MAR 20-22, 2003
作者:  Leung BH;  Fong WK;  Surya C;  Lu LW;  Ge WK;  Surya C Hong Kong Polytech Univ Photon Res Ctr Dept Elect & Informat Engn Hong Kong Hong Kong Peoples R China. 电子邮箱地址: ensurya@polyu.edu.hk
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1525/281  |  提交时间：2010/10/29
Gan  Low-frequency Noise  Deep Levels  Deep Level Transient Fourier Spectroscopy  Devices