Defect influence on luminescence efficiency of GaN-based LEDs

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Defect influence on luminescence efficiency of GaN-based LEDs
	Li SP (Li Shuping); Fang ZL (Fang Zhilai); Chen HY (Chen Hangyang); Li JC (Li Jinchai); Chen XH (Chen Xiaohong); Yuan XL (Yuan Xiaoli); Sekiguchi T (Sekiguchi Takashi); Wang QM (Wang Qiming); Kang JY (Kang Junyong); Kang, JY, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. 电子邮箱地址: jykang@xmu.edu.cn
	2006
Conference Name	11th Conference on Defects Recognition Imaging and Physics in Semiconductors
Source Publication	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Pages	9 (1-3): 371-374
Conference Date	SEP 13-19, 2005
Conference Place	Beijing, PEOPLES R CHINA
Publication Place	THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND
Publisher	ELSEVIER SCI LTD
ISSN	1369-8001
metadata_83	xiamen univ, dept phys, xiamen 361005, peoples r china; xiamen univ, semicond photon res ctr, xiamen 361005, peoples r china; natl inst mat sci, tsukuba, ibaraki, japan; chinese acad sci, inst semicond, beijing 100864, peoples r china
Abstract	Wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. The pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. The cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. The electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency. (c) 2006 Elsevier Ltd. All rights reserved.
Keyword	Defects
Subject Area	光电子学
Indexed By	CPCI（ISTP）
Language	英语
Document Type	会议论文
Identifier	http://ir.semi.ac.cn/handle/172111/10004
Collection	中国科学院半导体研究所（2009年前）
Corresponding Author	Kang, JY, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. 电子邮箱地址: jykang@xmu.edu.cn
Recommended Citation GB/T 7714	Li SP ,Fang ZL ,Chen HY ,et al. Defect influence on luminescence efficiency of GaN-based LEDs[C]. THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND:ELSEVIER SCI LTD,2006:9 (1-3): 371-374.

Files in This Item:
File Name/Size	DocType	Version	Access	License
2385.pdf（142KB）			限制开放	--	Application Full Text

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Institution:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh

中国科学院半导体研究所机构知识库