中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共2条，第1-2条 帮助

已选(0)清除 条数/页：   排序方式：
Formation mechanism of defects in annealed InP 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES, 3419, TAIPEI, TAIWAN, JUL 09-11, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(383Kb)  |  收藏  |  浏览/下载：1304/254  |  提交时间：2010/10/29
Defects Formation  Hydrogen Related Defects  Semi-insulating  Inp  
High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES, 3419, TAIPEI, TAIWAN, JUL 09-11, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Lian P;  Wang LM;  Zhang XY;  Yang YL;  Zhang HQ;  Wang GH;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(307Kb)  |  收藏  |  浏览/下载：1430/275  |  提交时间：2010/10/29
Algainp  Quantum Well  Laser Diode  Mocvd