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Image Lag Optimization of Four-Transistor Pixel for High Speed CMOS Image 会议论文
Proceedings of SPIE 卷: 8194 文献号: 819435, Beijing, PEOPLES R CHINA, 2011
作者:  Zhou YF (Zhou Yangfan);  Cao ZX (Cao Zhongxiang);  Li QL (Li Quanliang);  Qin Q (Qin Qi);  Wu NJ (Wu Nanjian)
Adobe PDF(335Kb)  |  收藏  |  浏览/下载：3703/1352  |  提交时间：2011/12/13
A Novel RFID Tag Chip with Temperature Sensor in Standard CMOS Process 会议论文
2010 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS: 1109-1112 2010, Paris, FRANCE, MAY 30-JUN 02, 2010
作者:  Zhang Q (Zhang Qi);  Feng P (Feng Peng);  Zhou SH (Zhou Shenghua);  Geng ZQ (Geng Zhiqing);  Wu NJ (Wu Nanjian)
Adobe PDF(627Kb)  |  收藏  |  浏览/下载：1634/352  |  提交时间：2011/07/14
Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE 会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:  Feng, W (Feng, W.);  Pan, JQ (Pan, J. Q.);  Zhou, F (Zhou, F.);  Zhao, LJ (Zhao, L. J.);  Zhu, HL (Zhu, H. L.);  Wang, W (Wang, W.);  Feng, W, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(417Kb)  |  收藏  |  浏览/下载：1291/295  |  提交时间：2010/03/29
Buried-heterostructure Lasers  Bandgap Energy Control  Vapor-phase Epitaxy  Pressure Movpe  Converter  
Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation - art. no. 60200O 会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  Zhao, Q;  Pan, JQ;  Zhang, J;  Zhou, GT;  Wu, J;  Wang, LF;  Wang, W;  Zhao, Q, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(181Kb)  |  收藏  |  浏览/下载：1511/337  |  提交时间：2010/03/29
Selective-area Growth  Ultra-low-pressure  Integrated Optoelectronics  Optical Pulse Generation  Ring Laser  
Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE 会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17 (1-4), TOULOUSE, FRANCE, JUL 22-26, 2002
作者:  Lan Q;  Niu ZC;  Zhou DY;  Kong YC;  Wang XD;  Miao ZH;  Feng SL;  Niu ZC Chinese Acad Sci Natl Lab Superlattices Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(252Kb)  |  收藏  |  浏览/下载：1146/218  |  提交时间：2010/11/15
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2, KANAZAWA, JAPAN, MAY 27-31, 2001
作者:  Niu ZC;  Wang XD;  Miao ZH;  Lan Q;  Kong YC;  Zhou DY;  Feng SL;  Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1285/0  |  提交时间：2010/10/29
Molecular Beam Epitaxy  Ingaas Islands  Photolumineseence  Line-width  1.3 Mu-m  Inas/gaas Quantum Dots  Optical-properties  Cap Layer  Gaas  Luminescence  Strain  
Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Peng CS;  Chen H;  Zhao ZY;  Li JH;  Dai DY;  Huang Q;  Zhou JM;  Zhang YH;  Tung CH;  Sheng TT;  Wang J;  Peng CS Chinese Acad Sci Inst Phys POB 603 Beijing 100080 Peoples R China.
Adobe PDF(208Kb)  |  收藏  |  浏览/下载：1536/311  |  提交时间：2010/11/15
Threading Dislocation  Si(100)  Layers  Films  
High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Wang ZM;  Wang LM;  He GP;  Yang YL;  Zhang HQ;  Zhou XN;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(189Kb)  |  收藏  |  浏览/下载：1221/273  |  提交时间：2010/10/29
Ingaasp  Strained Layer Quantum Well  Laser Diode  Mocvd