Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE
	Lan Q; Niu ZC; Zhou DY; Kong YC; Wang XD; Miao ZH; Feng SL; Niu ZC Chinese Acad Sci Natl Lab Superlattices Inst Semicond Beijing 100083 Peoples R China.
	2003
会议名称	International Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02)
会议录名称	PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17 (1-4)
页码	114-116
会议日期	JUL 22-26, 2002
会议地点	TOULOUSE, FRANCE
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	1386-9477
部门归属	chinese acad sci, natl lab superlattices, inst semicond, beijing 100083, peoples r china
摘要	Surface morphology and optical properties of 1.3 mum self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (C) 2002 Elsevier Science B.V. All rights reserved.
学科领域	半导体物理
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14843
专题	中国科学院半导体研究所（2009年前）
通讯作者	Niu ZC Chinese Acad Sci Natl Lab Superlattices Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Lan Q,Niu ZC,Zhou DY,et al. Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2003:114-116.

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