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High brightness InAs/GaAs quantum dot tapered laser at 1.3 mu m with high temperature stability 会议论文
Proceedings of SPIE-The International Society for Optical Engineering vol.7844: Art. No. 784404 2010, Beijing, PEOPLES R CHINA, OCT 18-19, 2010
作者:  Cao YL (Cao Yu-Lian);  Xu PF (Xu Peng-fei);  Ji HM (Ji Hai-Ming);  Yang T (Yang Tao);  Chen LH (Chen Liang-Hui)
Adobe PDF(374Kb)  |  收藏  |  浏览/下载：2374/561  |  提交时间：2011/07/14
An integrated optical receiver in MS/RF CMOS process 会议论文
2006 3rd IEEE International Conference on Group IV Photonics, Ottawa, CANADA, SEP 13-15, 2006
作者:  Liu HJ (Liu Haijun);  Xu XS (Xu Xingsheng);  Mao LH (Mao Luhong);  Gao P (Gao Peng);  Chen HD (Chen Hongda);  Liu, HJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(624Kb)  |  收藏  |  浏览/下载：1459/234  |  提交时间：2010/03/29
Amplifier  
Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots 会议论文
JOURNAL OF LUMINESCENCE, Shanghai, PEOPLES R CHINA, AUG 01-05, 2005
作者:  Wang FZ;  Chen ZH;  Sun J;  Bai LH;  Huang SH;  Xiong H;  Jin P;  Wang ZG;  Shen SC;  Chen, ZH, Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China. 电子邮箱地址: zhanghai@fudan.edu.cn
Adobe PDF(269Kb)  |  收藏  |  浏览/下载：1823/293  |  提交时间：2010/03/29
Quantum Dots  
A standard CMOS compatible monolithic photo-detector and trans-impedance amplifier 会议论文
2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS丛书标题: IEEE Conference on Electron Devices and Solid-State Circuits, Kowloon, PEOPLES R CHINA, DEC 19-21, 2005
作者:  Chen HD (Chen Hongda);  Gu M (Gu Ming);  Huang JL (Huang Jiale);  Gao P (Gao Peng);  Mao LH (Mao Luhong);  Chen, HD, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(1988Kb)  |  收藏  |  浏览/下载：1387/208  |  提交时间：2010/03/29
High brightness AlGaInP orange light emitting diodes 会议论文
DISPLAY DEVICES AND SYSTEMS II, 3560, BEIJING, PEOPLES R CHINA, SEP 16-17, 1998
作者:  Li YZ;  Wang GH;  Ma XY;  Peng HI;  Wang ST;  Chen LH;  Li YZ Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
Adobe PDF(125Kb)  |  收藏  |  浏览/下载：1440/359  |  提交时间：2010/10/29
High Brightness  Led  Mocvd  Algainp  
Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes 会议论文
DISPLAY DEVICES AND SYSTEMS II, 3560, BEIJING, PEOPLES R CHINA, SEP 16-17, 1998
作者:  Wang GH;  Ma XY;  Zhang YF;  Peng HI;  Wang ST;  Li YZ;  Chen LH;  Wang GH Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
Adobe PDF(177Kb)  |  收藏  |  浏览/下载：1483/352  |  提交时间：2010/10/29
Led  Coupled Distributed Bragg Reflector  Mocvd  Algainp