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A standard CMOS compatible monolithic photo-detector and trans-impedance amplifier | |
Chen HD (Chen Hongda); Gu M (Gu Ming); Huang JL (Huang Jiale); Gao P (Gao Peng); Mao LH (Mao Luhong); Chen, HD, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. | |
2005 | |
会议名称 | IEEE Conference on Electron Devices and Solid-State Circuits |
会议录名称 | 2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS丛书标题: IEEE Conference on Electron Devices and Solid-State Circuits |
页码 | PROCEEDINGS: 721-724 |
会议日期 | DEC 19-21, 2005 |
会议地点 | Kowloon, PEOPLES R CHINA |
出版地 | 345 E 47TH ST, NEW YORK, NY 10017 USA |
出版者 | IEEE |
ISBN | 978-0-7803-9339-4 |
部门归属 | chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
摘要 | A 1GHz monolithic photo-detector (PD) and trans-impedance amplifier (TIA) is designed with the standard 0.35 mu m CMOS technique. The design of the photo-detector is analyzed and the CMOS trans-impedance amplifier is also analyzed in the paper. The integrating method is described too. The die photograph is also showed in the paper. |
学科领域 | 光电子学 |
主办者 | IEEE Electron Devices Soc.; IEEE Solid State Circuits Soc.; IEEE Hong Kong Sect.; KC Wong Educ Fdn.; Solomon Systech Ltd. |
收录类别 | 其他 |
语种 | 英语 |
文献类型 | 会议论文 |
条目标识符 | http://ir.semi.ac.cn/handle/172111/9866 |
专题 | 中国科学院半导体研究所(2009年前) |
通讯作者 | Chen, HD, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. |
推荐引用方式 GB/T 7714 | Chen HD ,Gu M ,Huang JL ,et al. A standard CMOS compatible monolithic photo-detector and trans-impedance amplifier[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2005:PROCEEDINGS: 721-724. |
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