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Electronic characteristics of InAs self-assembled quantum dots 会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 7 (3-4), FUKUOKA, JAPAN, JUL 12-16, 1999
作者:  Wang HL;  Feng SL;  Zhu HJ;  Ning D;  Chen F;  Wang HL Qufu Normal Univ Dept Phys Qufu 273165 Peoples R China.
Adobe PDF(105Kb)  |  收藏  |  浏览/下载：1160/237  |  提交时间：2010/11/15
Inas/gaas Quantum Dots  Self-assembled Structure  Dlts  Pl  Band Offset  Energy-levels  Carrier Relaxation  Spectroscopy  
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 会议论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 426 (1), FLORENCE, ITALY, MAR 04-06, 1998
作者:  Li Z;  Dezilllie B;  Eremin V;  Li CJ;  Verbitskaya E;  Li Z Brookhaven Natl Lab Bldg 535BPOB 5000 Upton NY 11973 USA.
Adobe PDF(429Kb)  |  收藏  |  浏览/下载：1579/327  |  提交时间：2010/11/15
Strip Detectors  Silicon Detectors  Annealing  Simulation  Irradiation  N-eff  Junction Detectors  Radiation-damage  Models  
Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures 会议论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 46 (3), TORONTO, CANADA, NOV 08-14, 1998
作者:  Dezillie B;  Li Z;  Eremin V;  Bruzzi M;  Pirollo S;  Pandey SU;  Li CJ;  Dezillie B Brookhaven Natl Lab Upton NY 11973 USA.
Adobe PDF(790Kb)  |  收藏  |  浏览/下载：1500/308  |  提交时间：2010/11/15
Silicon Detectors