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High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers 会议论文
1999 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, SHATIN, HONG KONG, 36337
作者:  Wang ZG;  Liang JB;  Qian G;  Xu B;  Wang ZG Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(114Kb)  |  收藏  |  浏览/下载：1116/176  |  提交时间：2010/10/29
Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Liu JP;  Kong MY;  Liu XF;  Li JP;  Huang DD;  Li LX;  Sun DZ;  Kong MY Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(265Kb)  |  收藏  |  浏览/下载：1479/272  |  提交时间：2010/11/15
Stranski-krastanow Growth  Quantum Dots  Relaxation  Inas  
New method for the growth of highly uniform quantum dots 会议论文
MICROELECTRONIC ENGINEERING, 43-4, LISBON, PORTUGAL, MAY 19-21, 1997
作者:  Pan D;  Zeng YP;  Kong MY;  Pan D Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: dongpan@red.senu.ac.cn
Adobe PDF(274Kb)  |  收藏  |  浏览/下载：1087/178  |  提交时间：2010/11/15
Self-formed Quantum Dot  Stranski-krastanow Growth Mode  Superlattice  Molecular-beam Epitaxy  Ingaas  Gaas  Dislocations  Multilayers  Defects  Strain