Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing
	Liu JP; Kong MY; Liu XF; Li JP; Huang DD; Li LX; Sun DZ; Kong MY Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
	1999
会议名称	10th International Conference on Molecular Beam Epitaxy (MBE-X)
会议录名称	JOURNAL OF CRYSTAL GROWTH, 201
页码	556-559
会议日期	AUG 31-SEP 04, 1998
会议地点	CANNES, FRANCE
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china
摘要	Strain relaxation in initially flat SiGe film on Si(1 0 0) during rapid thermal annealing is studied. The surface roughens after high-temperature annealing, which has been attributed to the intrinsic strain in the epilayers. It is interesting to find that high-temperature annealing also results in roughened interface, indicating the occurrence of preferential interdiffusion. It is suggested that the roughening at the surface makes the intrinsic strain in the epilayer as well as the substrate unequally distributed, causing preferential interdiffusion at the SiGe/Si interface during high-temperature annealing. (C) 1999 Elsevier Science B.V. All rights reserved.
关键词	Stranski-krastanow Growth Quantum Dots Relaxation Inas
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15035
专题	中国科学院半导体研究所（2009年前）
通讯作者	Kong MY Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Liu JP,Kong MY,Liu XF,et al. Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,1999:556-559.

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