×
验证码:
换一张
忘记密码?
记住我
×
登录
中文版
|
English
中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
ALL
ORCID
题名
作者
学科领域
关键词
文献类型
出处
收录类别
出版者
发表日期
存缴日期
资助项目
学科门类
学习讨论厅
图片搜索
粘贴图片网址
首页
研究单元&专题
作者
文献类型
学科分类
知识图谱
新闻&公告
在结果中检索
研究单元&专题
中国科学院半导体研... [43]
作者
江德生 [3]
谭平恒 [1]
杨晓红 [1]
叶小玲 [1]
于丽娟 [1]
徐波 [1]
更多...
文献类型
会议论文 [43]
发表日期
2009 [1]
2008 [3]
2007 [1]
2006 [4]
2005 [2]
2004 [3]
更多...
语种
英语 [43]
出处
2002 3RD I... [3]
APOC 2001:... [2]
Internatio... [2]
JOURNAL OF... [2]
MICROELECT... [2]
1997 IEEE ... [1]
更多...
资助项目
收录类别
CPCI-S [43]
资助机构
Chinese In... [3]
China Natl... [2]
Chinese Ma... [2]
Mat Res So... [2]
SPIE.; Chi... [2]
SPIE.; Chi... [2]
更多...
×
知识图谱
SEMI OpenIR
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共43条,第1-10条
帮助
限定条件
收录类别:CPCI\-S
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
题名升序
题名降序
WOS被引频次升序
WOS被引频次降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
作者升序
作者降序
期刊影响因子升序
期刊影响因子降序
Si based quantum cascade structure: from energy band structures design to materials growth
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Hangzhou, PEOPLES R CHINA, JUN 09-14, 2008
作者:
Yu, JZ
;
Han, GQ
;
Yu, JZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(458Kb)
  |  
收藏
  |  
浏览/下载:1830/311
  |  
提交时间:2010/03/09
Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Zhao, YW
;
Zhang, F
;
Zhang, R
;
Dong, ZY
;
Wei, XC
;
Zeng, YP
;
Li, JM
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(340Kb)
  |  
收藏
  |  
浏览/下载:2030/527
  |  
提交时间:2010/03/09
Zinc Oxide
Defect
Vacancy
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor
会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:
Ji, G
;
Sun, GS
;
Ning, J
;
Liu, XF
;
Zhao, YM
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Ji, G, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(1783Kb)
  |  
收藏
  |  
浏览/下载:1498/225
  |  
提交时间:2010/03/09
Measurement and analysis of microwave frequency response of semiconductor optical amplifiers - art. no. 682406
会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:
Liu, J
;
Zhang, SJ
;
Hu, YH
;
Xie, L
;
Huang, YZ
;
Zhu, NH
;
Liu, J, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(338Kb)
  |  
收藏
  |  
浏览/下载:1496/314
  |  
提交时间:2010/03/09
Semiconductor Optical Amplifier
Microwave Frequency Response
Direct-subtracting Method
Vector Network Analyzer
Multisectional Model
Rate Equation
Steady State
Small-signal State
Micro-raman investigation of defects in a 4H-SiC homoepilayer
会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Li, JM (Li, J. M.)
;
Zhao, YM (Zhao, Y. M.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Zeng, YP (Zeng, Y. P.)
;
Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1318Kb)
  |  
收藏
  |  
浏览/下载:1470/197
  |  
提交时间:2010/03/29
Micro-raman
4h-sic
Defects
3c-inclusions
Triangle-shaped Inclusion
Epitaxial Layers
Silicon-carbide
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
;
Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)
  |  
收藏
  |  
浏览/下载:1478/203
  |  
提交时间:2010/03/29
Homoepitaxial Growth
Low-pressure Hot-wall Cvd
Structural And Optical Characteristics
Intentional Doping
Schottky Barrier Diodes
Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Miao, ZH (Miao, Zhenhua)
;
Gong, Z (Gong, Zheng)
;
Fang, ZD (Fang, Zhidan)
;
Niu, ZC (Niu, Zhichuan)
;
Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(378Kb)
  |  
收藏
  |  
浏览/下载:1658/291
  |  
提交时间:2010/03/29
Atomic Hydrogen
Molecular Beam Epitaxy
Step Arrays
Molecular-beam Epitaxy
Atomic-hydrogen
Vicinal Surface
Quantum Dots
Growth
Temperature
Irradiation
Mechanism
Mbe
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Zeng, YX (Zeng, Yuxin)
;
Liu, W (Liu, Wei)
;
Yang, FH (Yang, Fuhua)
;
Xu, P (Xu, Ping)
;
Tan, PH (Tan, Pingheng)
;
Zheng, HZ (Zheng, Houzhi)
;
Zeng, YP (Zeng, Yiping)
;
Xing, YJ (Xing, Yingjie)
;
Yu, DP (Yu, Dapeng)
;
Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(561Kb)
  |  
收藏
  |  
浏览/下载:1720/264
  |  
提交时间:2010/03/29
Inas Quantum Dot
Photoluminescence
Modulation-doped
Field Effect Transistor
Mu-m
Capping Layer
Research on the band-gap of InN grown on siticon substrates
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Xiao, HL
;
Wang, XL
;
Wang, JX
;
Zhang, NH
;
Liu, HX
;
Zeng, YP
;
Li, JM
;
Xiao, HL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(164Kb)
  |  
收藏
  |  
浏览/下载:1491/408
  |  
提交时间:2010/03/29
Molecular-beam Epitaxy
Wurtzite Inn
Nitride
Absorption
Alloys
Films
Subtraction of S-parameters for adiabatic small-signal modulation characteristics of laser diode - art. no. 60201V
会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:
Zhang, SJ
;
Wen, JM
;
Song, HP
;
Zhu, NH
;
Zhang, SJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(287Kb)
  |  
收藏
  |  
浏览/下载:1531/423
  |  
提交时间:2010/03/29
Semiconductor Laser Diode
Subtraction Method
Scattering Parameters
Intrinsic Response
Thermal Effect
Frequency-response