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Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Zhao, YW;  Zhang, F;  Zhang, R;  Dong, ZY;  Wei, XC;  Zeng, YP;  Li, JM;  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(340Kb)  |  收藏  |  浏览/下载：1913/527  |  提交时间：2010/03/09
Zinc Oxide  Defect  Vacancy  
Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Wei, XC;  Zhao, YW;  Dong, ZY;  Li, JM;  Wei, XC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(308Kb)  |  收藏  |  浏览/下载：1878/508  |  提交时间：2010/03/09
Zinc Oxide  X-ray Diffraction  Defects  Single Crystal  
Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:  Zhao, YW (Zhao, Youwen);  Dong, ZY (Dong, Zhiyuan);  Dong, HW (Dong, Hongwei);  Sun, NF (Sun, Niefeng);  Sun, TN (Sun, Tongnian);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(376Kb)  |  收藏  |  浏览/下载：1527/450  |  提交时间：2010/03/29
Stimulated Current Spectroscopy  Current Transient Spectroscopy  Fe-doped Inp  Point-defects  Compensation  Temperature  Donors  Traps  
Deep levels in high resistivity GaN epilayers grown by MOCVD 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Fang, CB;  Wang, XL;  Wang, JX;  Liu, C;  Wang, CM;  Hu, GX;  Li, JP;  Li, CJ;  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(270Kb)  |  收藏  |  浏览/下载：1370/262  |  提交时间：2010/03/29
Thermally Stimulated Current  Gallium Nitride  Defects  
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文
2005 International Conference on Indium Phosphide and Related Materials丛书标题: CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS, Glasgow, SCOTLAND, MAY 08-12, 2005
作者:  Zhao, YW;  Dong, ZY;  Zhao, YW, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 10083, Peoples R China.
Adobe PDF(638Kb)  |  收藏  |  浏览/下载：1582/383  |  提交时间：2010/03/29
Encapsulated Czochralski Inp  Semiconductor Compound-crystals  Stimulated Current Spectroscopy  Current Transient Spectroscopy  Deep-level Defects  Annealing Ambient  Point-defects  Fe  Phosphide  Donors  
Annealing ambient controlled deep defect formation in InP 会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:  Zhao YW;  Dong ZY;  Duan ML;  Sun WR;  Zeng YP;  Sun NF;  Sun TN;  Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc
Adobe PDF(186Kb)  |  收藏  |  浏览/下载：1470/301  |  提交时间：2010/10/29
Fe-doped Inp  Semiinsulating Inp  Point-defects  Pressure  Wafers  Traps  
Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration 会议论文
SMIC-XIII2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Zhao, YW;  Dong, ZY;  Zhang, YH;  Li, CJ;  Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(230Kb)  |  收藏  |  浏览/下载：1297/312  |  提交时间：2010/03/29
Deep-level Defects  Fe-doped Inp  Grown Inp  Spectroscopy  Resonance  Wafer  
Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Wang LS;  Yue GZ;  Liu XL;  Wang XH;  Wang CX;  Wang D;  Lu DC;  Wang ZG;  Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1018/0  |  提交时间：2010/10/29
Metastability  Antisite  
The role of hydrogen in semi-insulating INP 会议论文
HYDROGEN IN SEMICONDUCTORS AND METALS, 513, SAN FRANCISCO, CA, APR 13-17, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Qian JJ;  Chen YH;  Wang ZG;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1031/0  |  提交时间：2010/10/29