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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Recent research results on deep level defects in semi-insulating InP - Application to improve material quality
会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
Authors:
Zhao, YW (Zhao, Youwen)
;
Dong, ZY (Dong, Zhiyuan)
;
Dong, HW (Dong, Hongwei)
;
Sun, NF (Sun, Niefeng)
;
Sun, TN (Sun, Tongnian)
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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View/Download:1607/450
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Submit date:2010/03/29
Stimulated Current Spectroscopy
Current Transient Spectroscopy
Fe-doped Inp
Point-defects
Compensation
Temperature
Donors
Traps
无权访问的条目
期刊论文
Authors:
Zhao Youwen
;
Luo Yilin
;
Sun Niefeng
;
S Fung
;
Beling C D
;
Sun Tongnian
;
Lin Lanyin
Adobe PDF(303Kb)
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View/Download:957/347
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Submit date:2010/11/23
无权访问的条目
期刊论文
Authors:
Zhao Youwen
;
Sun Niefeng
;
S. Fung
;
C. D. Beling
;
Sun Tongnian
;
Lin Lanying
Adobe PDF(280Kb)
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View/Download:960/380
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Submit date:2010/11/23
无权访问的条目
期刊论文
Authors:
Zhao Youwen
;
Dong Hongwei
;
Jiao Jinghua
;
Zhao Jianqun
;
Lin Lanying
;
Sun Niefeng
;
Sun Tongnian
Adobe PDF(289Kb)
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View/Download:924/263
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Submit date:2010/11/23
可控电参数的低位错磷化铟单晶制备
成果
1985
Accomplishers:
叶式中
;
刘巽琅
;
刘思林
;
孙同年
;
焦景华
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View/Download:1280/0
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Submit date:2010/04/13
磷化铟