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Single steady frequency and narrow line width external cavity semiconductor laser 会议论文
ADVANCED CHARACTERIZATION TECHNIQUES FOR OPTICS, SEMICONDUCTORS, AND NANOTECHNOLOGIES, 5188, SAN DIEGO, CA, AUG 03-05, 2003
作者:  Zhao WR;  Jiang PF;  Xie FZ;  Zhao WR Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(275Kb)  |  收藏  |  浏览/下载：1282/257  |  提交时间：2010/10/29
External Cavity Semiconductor Laser  Light Feedback  Single Longitudinal Mode  Spectral Line Width  Feedback  Diode  
Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline 会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
作者:  Zhang SB;  Liao XB;  Xu YY;  Hu ZH;  Zeng XB;  Diao HW;  Luo MC;  Kong G;  Zhang SB Chinese Acad Sci Inst Semicond Ctr Condensed State Phys State Key Lab Surface Phys Beijing 100083 Peoples R China.
Adobe PDF(93Kb)  |  收藏  |  浏览/下载：1723/428  |  提交时间：2010/10/29
Polymorphous Silicon  Light-scattering  Thin-films  Si  Microcrystallinity  Absorption  States  
Architecture research and hardware implementation on simplified neural computing system for face identification 会议论文
PROCEEDINGS OF THE INTERNATIONAL JOINT CONFERENCE ON NEURAL NETWORKS 2003, VOLS 1-4, PORTLAND, OR, JUL 20-24, 2003
作者:  Xu J;  Li WJ;  Qu YF;  Qin H;  Wang SJ;  Xu J Chinese Acad Sci Inst Semicond Artificial Neural Networks Lab POB 912 Beijing 100083 Peoples R China.
Adobe PDF(216Kb)  |  收藏  |  浏览/下载：1400/441  |  提交时间：2010/10/29
Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 235 (2), GUILDFORD, ENGLAND, AUG 05-08, 2002
作者:  Li GH;  Fang ZL;  Su FH;  Ma BS;  Ding K;  Han HX;  Sou IK;  Ge WK;  Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(179Kb)  |  收藏  |  浏览/下载：1468/261  |  提交时间：2010/11/15
Optical-absorption  Zns-te  Transition  Edge  
Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth 会议论文
MICROELECTRONIC ENGINEERING, 66 (1-4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Zhang ZC;  Ren BY;  Chen YH;  Yang SY;  Wang ZG;  Zhang ZC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(389Kb)  |  收藏  |  浏览/下载：1374/254  |  提交时间：2010/11/15
Czochralski Method  Growth From Melt  Semiconductor Silicon  Argon Gas Flow  Computer Simulation  Oxygen Content  Furnace Pressure  
Influence of heated catalyzer on thermal distribution of substrate in HWCVD system 会议论文
THIN SOLID FILMS, 430 (1-2), DENVER, COLORADO, SEP 10-13, 2002
作者:  Zhang Q;  Zhu M;  Wang L;  Liu E;  Zhu M Chinese Acad Sci Dept Phys Grad Sch POB 3908 Beijing 100039 Peoples R China.
Adobe PDF(223Kb)  |  收藏  |  浏览/下载：1286/238  |  提交时间：2010/11/15
Amorphous-silicon  Deposition  
Lasing of CdSSe quantum dots in glass spherical microcavity 会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17 (1-4), TOULOUSE, FRANCE, JUL 22-26, 2002
作者:  Lu SL;  Jia R;  Jiang DS;  Li SS;  Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(91Kb)  |  收藏  |  浏览/下载：1211/267  |  提交时间：2010/11/15