Influence of heated catalyzer on thermal distribution of substrate in HWCVD system

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	Influence of heated catalyzer on thermal distribution of substrate in HWCVD system
	Zhang Q; Zhu M; Wang L; Liu E; Zhu M Chinese Acad Sci Dept Phys Grad Sch POB 3908 Beijing 100039 Peoples R China.
	2003
会议名称	2nd International Conference on Cat-CVD (Hot-Wire CVD) Process
会议录名称	THIN SOLID FILMS, 430 (1-2)
页码	50-53
会议日期	SEP 10-13, 2002
会议地点	DENVER, COLORADO
出版地	PO BOX 564, 1001 LAUSANNE, SWITZERLAND
出版者	ELSEVIER SCIENCE SA
ISSN	0040-6090
部门归属	chinese acad sci, dept phys, grad sch, beijing 100039, peoples r china; chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Based on Stefan-Boltzman and Lambert theorems, the radiation energy distribution on substrate (REDS) from catalyzer with parallel filament geometry has been simulated by variation of filament and system layout in hot-wire chemical vapor deposition. The REDS uniformity is sensitive to the distance between filament and substrate d(f-s) when d(f-s) less than or equal to 4 cm. As d(f-s) > 4 cm, the REDS uniformity is independent of d(f-s) and is mainly determined by filament number and filament separation. Two-dimensional calculation shows that the REDS uniformity is limited by temperature decay at filament edges. The simulation data are in good agreement with experiments. (C) 2003 Elsevier Science B.V. All rights reserved.
关键词	Amorphous-silicon Deposition
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14841
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhu M Chinese Acad Sci Dept Phys Grad Sch POB 3908 Beijing 100039 Peoples R China.
推荐引用方式 GB/T 7714	Zhang Q,Zhu M,Wang L,et al. Influence of heated catalyzer on thermal distribution of substrate in HWCVD system[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2003:50-53.

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