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无权访问的条目 期刊论文
作者:  Zhang L(张磊);  Ji RQ(冀瑞强);  Tian YH(田永辉);  Yang L(杨林);  Zhou P(周平);  Lu YY(卢洋洋);  Zhu WW(朱巍巍);  Liu YL(刘育梁);  Jia LX(贾连希);  Fang Q(方青);  Yu MB(余明斌)
Adobe PDF(1968Kb)  |  收藏  |  浏览/下载：2659/632  |  提交时间：2011/03/25
Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 会议论文
JOURNAL OF APPLIED PHYSICS
作者:  Chen J;  Fan WJ;  Xu Q;  Zhang XW;  Li SS;  Xia JB;  Chen, J, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore.
Adobe PDF(1459Kb)  |  收藏  |  浏览/下载：1376/208  |  提交时间：2010/03/09
Emission  
Photoluminescence mechanism of Si nanocrystals embedded in SiO2 matrix 会议论文
2006 3rd IEEE International Conference on Group IV Photonics, Ottawa, CANADA, SEP 13-15, 2006
作者:  Wang XX (Wang Xiaoxin);  Cheng BW (Cheng Buwen);  Yu JZ (Yu Jinzhong);  Wang QM (Wang Qiming);  Wang, XX, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(275Kb)  |  收藏  |  浏览/下载：1651/318  |  提交时间：2010/03/29
Porous Silicon  
Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Shi GX;  Xu B;  Ye XL;  Jin P;  Chen YH;  Wang YL;  Cui CX;  Wang ZG;  Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(869Kb)  |  收藏  |  浏览/下载：1497/273  |  提交时间：2010/03/29
1.3 Mu-m