1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

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	1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy
	Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG; Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.
	2006
会议名称	32nd International Symposium on Compound Semiconductors
会议录名称	Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS
页码	Vol 3 no 3 3 (3): 631-634
会议日期	SEP 18-22, 2005
会议地点	Rust, GERMANY
出版地	605 THIRD AVE, NEW YORK, NY 10158-0012 USA
出版者	WILEY-VCH, INC
ISSN	1610-1634
部门归属	chinese acad sci, inst semicond, state key lab superlattice & microstruct, beijing 100083, peoples r china
摘要	High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn0.425NAs/GaAs (6 nm / 20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellosung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
关键词	Improved Luminescence Efficiency Temperature Photoluminescence Nitrogen Origin Diodes
学科领域	半导体物理
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9938
专题	中国科学院半导体研究所（2009年前）
通讯作者	Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Niu, ZC,Zhang, SY,Ni, HQ,et al. 1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy[C]. 605 THIRD AVE, NEW YORK, NY 10158-0012 USA:WILEY-VCH, INC,2006:Vol 3 no 3 3 (3): 631-634.

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