Deep levels in high resistivity GaN epilayers grown by MOCVD

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Deep levels in high resistivity GaN epilayers grown by MOCVD
	Fang, CB; Wang, XL; Wang, JX; Liu, C; Wang, CM; Hu, GX; Li, JP; Li, CJ; Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
	2006
会议名称	32nd International Symposium on Compound Semiconductors
会议录名称	Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS
页码	Vol 3 no 3 3 (3): 585-588
会议日期	SEP 18-22, 2005
会议地点	Rust, GERMANY
出版地	605 THIRD AVE, NEW YORK, NY 10158-0012 USA
出版者	WILEY-VCH, INC
ISSN	1610-1634
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Undoped high resistivity (HR) GaN epilayers were grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD). Thermally stimulated current (TSC) and resistivity measurements have been carried out to investigate deep level traps. Deep levels with activation energies of 1.06eV and 0.85eV were measured in sample 1. Gaussian fitting of TSC spectra showed five deep levels in different samples. (c) 2006 WILEY VCH Vertag GmbH & Co. KGaA, Weinheim
关键词	Thermally Stimulated Current Gallium Nitride Defects
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9934
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Fang, CB,Wang, XL,Wang, JX,et al. Deep levels in high resistivity GaN epilayers grown by MOCVD[C]. 605 THIRD AVE, NEW YORK, NY 10158-0012 USA:WILEY-VCH, INC,2006:Vol 3 no 3 3 (3): 585-588.

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